Browsing by Author "von Ammon, W."

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Characterization of interstitial related defects in p-silicon substrates by homoepitaxial

Schmolke, R.
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Angelberger, W.
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von Ammon, W.
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Bender, Hugo
Proceedings paper
2001, GADEST 2001 - Proceedings of the 9th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology;, p.231
Defects in As-grown silicon and their evolution during heat treatments

Vanhellemont, Jan
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Dornberger, E.
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Esfandyari, J.
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Kissinger, G.
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Trauwaert, Marie-Astrid
Proceedings paper
1997, Defects in Semiconductors 19 - ICDS 19, 21/07/1997, p.341-6
Impact of hydrogen on oxygen precipitation and gate oxide integrity after RTA processing

Möller, T.
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Obermeier, G.
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Bearda, Twan
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Huber, A.
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Schmolke, R.
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von Ammon, W.
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Lerch, W.
Proceedings paper
2001, GADEST 2001 - Proceedings of the 9th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology;, p.127-132