Browsing by author "Versluys, J."
Now showing items 1-7 of 7
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Analysis of oxygen thermal donor formation in n-type CZ silicon
Rafi, Joan Marc; Simoen, Eddy; Claeys, Cor; Ulyashin, A.G.; Job, R.; Fahrner, W.R.; Versluys, J.; Clauws, P.; Lozano, M.; Campabadal, F. (2003) -
Deep levels in high-temperature 1 MeV electron irradiated n-type czochralski silicon
Simoen, Eddy; Rafi, Joan Marc; Claeys, Cor; Neimash, V.; Kraitchinski, A.; Kras'ko, M.; Tischenko, V.; Voitovych, V.; Versluys, J.; Clauws, P. (2003) -
DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon
Huang, Y.L.; Simoen, Eddy; Claeys, Cor; Job, R.; Ma, Y.; Düngen, W.; Fahrner, W.R.; Versluys, J.; Clauws, P. (2005) -
High-temperature electron-irradiation induced deep levels in n-type Cz silicon
Simoen, Eddy; Claeys, Cor; Neimash, V.; Kraitchinskii, A.; Kras'ko, M.; Tischenko, V.; Voitovych, V.; Versluys, J.; Clauws, P. (2003) -
Hydrogen-induced thermal donor formation in n-type oxygenated high-resistivity FZ silicon
Rafi, Joan Marc; Simoen, Eddy; Claeys, Cor; Ulyashin, A.G.; Job, R.; Fahrner, W.R.; Versluys, J.; Clauws, P.; Lozano, M.; Martinez, C.; Campabadal, F. (2002) -
Impact of direct plasma hydrogenation on thermal donor formation in N-type CZ silicon
Rafi, Joan Marc; Simoen, Eddy; Claeys, Cor; Huang, Y.L.; Ulyashin, A.G.; Job, R.; Versluys, J.; Clauws, P; Lozano, M.; Campabadal, F. (2005) -
Investigations by capacitance methods of n-Si irradiated by electrons at 450°C
Neimash, V.B.; Kras'Ko, M.M.; Kraitchinski, A.M.; Kolosyuk, A.G.; Voytovych, V.V.; Simoen, Eddy; Rafi, J.M.; Claeys, Cor; Versluys, J.; Clauws, P. (2004)