Browsing by author "Gaddemane, Gautam"
Now showing items 1-7 of 7
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Ab-intio based electron-phonon scattering for 2D materials within the NEGF framework
Gaddemane, Gautam; Duflou, Rutger; Sankaran, Kiroubanand; Pourtois, Geoffrey; Houssa, Michel; Afzalian, Aryan (2021) -
Advanced DFT-NEGF Transport Techniques for Novel 2-D Material and Device Exploration Including HfS2/WSe2 van der Waals Heterojunction TFET and WTe2/WS2 Metal/Semiconductor Contact
Afzalian, Aryan; Akhoundi, Elaheh; Gaddemane, Gautam; Duflou, Rutger; Houssa, Michel (2021) -
Co-integration Process Compatible Input/Output (I/O) Device Options for GAA Nanosheet Technology
Gaddemane, Gautam; Bhuwalka, Krishna K.; Matagne, Philippe; Rzepa, Gerhard; Van de Put, Maarten; Santermans, Sybren; Baumgartner, Oskar; Wu, Hao; Hellings, Geert (2022) -
Effects of the Dielectric Environment on Electronic Transport in Monolayer MoS2: Screening and Remote Phonon Scattering
Van de Put, Maarten L.; Gaddemane, Gautam; Gopalan, Sanjay; Fischetti, Massimo, V (2020) -
Fully coupled electron-phonon transport in two-dimensional-material-based devices using efficient FFT-based self-energy calculations
Duflou, Rutger; Gaddemane, Gautam; Houssa, Michel; Afzalian, Aryan (2025) -
Monte Carlo study of carrier transport in two-dimensional transition metal dichalcogenides: high-field characteristics and MOSFET simulation
Gopalan, Sanjay; Mansoori, Shoaib; Van de Put, Maarten; Gaddemane, Gautam; Fischetti, Massimo (2023) -
Theoretical study of carrier transport in supported and gated two-dimensional transition metal dichalcogenides
Gopalan, Sanjay; Van de Put, Maarten; Gaddemane, Gautam; Fischetti, Massimo V. (2023)