Browsing by author "Claeys, C."
Now showing items 21-40 of 91
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Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle
Ohyama, Hidenori; Simoen, Eddy; Kuroda, S.; Claeys, C.; Takami, Y.; Hakata, T.; Kobayashi, K.; Nakabayashi, M.; Sunaga, H. (2001) -
Degradation and recovery of Si diodes by 20-MEV protons and 220-MEV carbon particles
Ohyama, Hidenori; Hakata, T.; Simoen, Eddy; Claeys, C.; Sunaga, H.; Hososhima, M. (1998) -
Degradation of MOSFETs on SIMOX by irradiation
Hakata, T.; Ohyama, Hidenori; Simoen, Eddy; Claeys, C.; Vanhellemont, Jan; Takami, Y.; Sunaga, H.; Ogita, Y. (1997) -
Development of advanced corrosion free organic strippers for ULSI processing
Rotondaro, Antonio; Honda, K.; Maw, T.; Perry, D.; Lux, Marcel; Heyns, Marc; Claeys, C.; Daraktchiev, I. (1996) -
Dépendance des Caractéristiques Electriques, avec la Concentration Initiale d'Oxygène Interstitiel, de Diodes Si Irradiées avec des Electrons à Hautes Energies
Dubuc, Jean-Paul; Simoen, Eddy; Vanhellemont, Jan; Claeys, C. (1995) -
DLTS PL studies of proton radiation defects in tin-doped FZ silicon
Simoen, Eddy; Claeys, C.; Privitera, Vittorio; Coffa, S.; Kokkoris, M.; Kossionides, E.; Fanourakis, G.; Nylandsted Larsen, A.; Clauws., P. (2001) -
Effect of irradiation on AlGaAs/GaAs p-HEMTs
Ohyama, Hidenori; Simoen, Eddy; Kuroda, S.; Claeys, C.; Takami, Y.; Tagiri, T.; Hakata, T. (1999) -
Effects of high-temperature gamma ray irradiation on npn Si transistors
Ohyama, Hidenori; Hirao, T.; Simoen, Eddy; Claeys, C.; Fukushima, Y.; Tanigawa, A.; Onoda, S. (2001) -
Effects of irradiation in InGaAs photo devices
Kudou, T.; Ohyama, Hidenori; Sigaki, K.; Simoen, Eddy; Vanhellemont, Jan; Claeys, C.; Takami, Y.; Fujii, A. (1997) -
Electrical and structural properties of oxygen-precipitation induced extended defects in silicon
Claeys, C.; Simoen, Eddy; Vanhellemont, Jan (1997) -
Electrical quality assessment of epitaxial wafers based on p-n junction diagnostics
Claeys, C.; Simoen, Eddy; Poyai, Amporn; Czerwinski, A. (1999) -
Excess carrier cross-sectional profiling technique for determination of the surface recombination velocity
Gaubas, Eugenijus; Simoen, Eddy; Claeys, C.; Vanhellemont, Jan (2000) -
Excess carrier cross-sectional profiling technique for determination of the surface recombination velocity
Gaubas, Eugenijus; Vaitkus, J.; Simoen, Eddy; Claeys, C.; Vanhellemont, Jan (2001) -
Extraction of the minority carrier recombination lifetime from forward diode characteristics
Vanhellemont, Jan; Simoen, Eddy; Claeys, C. (1995) -
Extraction of the oxide charge density at front and back interfaces of SOI in nMOSFETs devices
Martino, Joao Antonio; Simoen, Eddy; Claeys, C. (2001) -
Factors determining the damage coefficients and the low-frequency noise in MeV proton irradiated silicon diodes
Simoen, Eddy; Claeys, C.; Ohyama, Hidenori; Takami, Y.; Sunaga, H. (1997) -
Gettering and stimulating factors on the formation of SIMOX structures with thin dielectric layer: experiment and modelling
Romanyuk, B. N.; Litovchenko, V. G.; Efremov, A. A.; Mel'nik, V. P.; Claeys, C. (1998) -
GRT model for random telegraph signals in MOSFETs
Sikula, J.; Vasina, Petr; Kolarova, Renata; Pavelka, J.; Claeys, C.; Simoen, Eddy; Brini, J.; Kamarinos, G. (1999) -
High-energy proton radiation induced defects in tin-doped N- tType sSilicon
Simoen, Eddy; Claeys, C.; Privitera, Vittorio; Coffa, S.; Larsen, A. N.; Clauws, P. (2001)