Browsing by author "Claeys, C."
Now showing items 41-60 of 91
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Impact of CMOS processing steps on the drain current kink of NMOSFETS at liquid helium temperature
Simoen, Eddy; Claeys, C. (2001) -
Impact of high energy particles on InGaP/InGaAs pseudomorphic HEMTs
Ohyama, Hidenori; Simoen, Eddy; Kuroda, S.; Claeys, C.; Takami, Y.; Hakata, T.; Sunaga, H. (1998) -
Impact of high-energy particle irradiation on polycrystalline silicon films
Nakabayashi, M.; Ohyama, Hidenori; Simoen, Eddy; Claeys, C.; Tanaka, K.; Kobayashi, K.; Miyahara, K. (2001) -
Impact of induced lattice defects on performance degradation of AlGaAs/GaAs p-HEMTs
Hakata, T.; Ohyama, Hidenori; Kuroda, S.; Simoen, Eddy; Claeys, C.; Kudou, T.; Kobayashi, K.; Nakabayashi, M.; Yoneoka, M.; Takami, Y.; Sunaga, H.; Miyahara, K. (1999) -
Impact of lattice defects on the performance degradation of Si photodiodes by high-temperature gamma and electron irradiation
Ohyama, Hidenori; Hirao, T.; Simoen, Eddy; Claeys, C.; Onoda, S.; Takami, Y.; Itoh, H. (2001) -
Impact of oxygen related extended defects on silicon diode characteristics
Vanhellemont, Jan; Simoen, Eddy; Kaniava, Arvydas; Libezny, Milan; Claeys, C. (1995) -
Induced lattice defects in InGaAsP laser diodes by high-temperature gamma ray irradiation
Ohyama, Hidenori; Hirao, T.; Simoen, Eddy; Claeys, C.; Onoda, S.; Takami, Y.; Itoh, H. (2001) -
Influence of mechanical stress on the electrical performance of polycrystalline-silicon resistors
Nakabayashi, M.; Ohyama, Hidenori; Kobayashi, K.; Yoneoka, M.; Simoen, Eddy; Claeys, C.; Takami, Y.; Sunaga, H.; Takizawa, H. (2000) -
Lattice defects in high quality as-grown CZ silicon, studied with light scattering and preferential etching techniques
Vanhellemont, Jan; Kissinger, G.; Gräf, D.; Kenis, Karine; Depas, Michel; Mertens, Paul; Lambert, U.; Heyns, Marc; Claeys, C.; Richter, H.; Wagner, Patrick (1995) -
Lifetime study in advanced isolation techniques
Poyai, Amporn; Simoen, Eddy; Claeys, C.; Rooyackers, Rita; Badenes, Gonçal (2000) -
Low Frequency Noise: A Show Stopper for State-of-the-art and Future Si, Ge-based and III-V Technologies
Claeys, C.; Oliviera, A.; He, L.; Takakura, K.; Veloso, Anabela; Putcha, Vamsi; Arimura, Hiroaki; Simoen, Eddy (2021) -
Low-frequency noise behaviour of high-energy electron irradiated Si n+p junction diodes
Dubuc, Jean-Paul; Simoen, Eddy; Vasina, Petr; Claeys, C. (1995) -
Low-frequency noise characterisation of silicon-on-insulator depletion mode pMOSFETs
Lukyanchikova, N. B.; Petrichuk, M. V.; Garbar, N. P.; Simoen, Eddy; Claeys, C. (1995) -
Low-Frequency Noise Characterization of High Energy Electron and Gamma-Irradiated Si Junction Diodes
Claeys, C.; Dubuc, Jean-Paul; Simoen, Eddy (1995) -
Low-Frequency Noise in SOI p-MOSFETs Prepared on SIMOX and ZMR Substrates
Lukyanchikova, N.; Petrichuk, M.; Garbar, N.; Simoen, Eddy; Claeys, C. (1995) -
Models for Burst and RTS Noise Mechanism in Electronic Devices
Sikula, J.; Sikulova, M.; Vasina, Petr; Claeys, C.; Simoen, Eddy (1995) -
On the recombination activity of oxygen precipitation related lattice defects in silicon
Vanhellemont, Jan; Kaniava, Arvydas; Libezny, Milan; Simoen, Eddy; Kissinger, G.; Gaubas, E.; Claeys, C.; Clauws, P. (1995) -
p-n Junction leeakage in neutron-irradiated diodes fabricated in various silicon substrates
Czerwinski, A.; Simoen, Eddy; Poyai, Amporn; Claeys, C.; Ohyama, Hidenori (2002) -
Perspectives of silicon-on-insulator technologies for cryogenic electronics
Claeys, C.; Simoen, Eddy (1998) -
Physical model of GR noise observed under inversion conditions near the pSi/SiO2 interfaces in SIMOX submicron MOSFETs and its application for defect characterization
Lukyanchikova, N. B.; Petrichuk, M. V.; Garbar, N. P.; Simoen, Eddy; Claeys, C. (1997)