Browsing by author "Fleetwood, D. M."
Now showing items 1-3 of 3
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Physical mechanisms of charge pumping and DCIV currents in floating-body SOI MOSFETs
Zhang, E. X.; Fleetwood, D. M.; Schrimpf, D.; Simoen, Eddy; Linten, Dimitri (2012-10) -
Total ionizing dose effects on strained Ge pMOS FinFETS on bulk Si
Zhang, E. Z; Fleetwood, D. M.; Hatchel, J. A.; Liang, C.; Reed, R.; Alles, M. L.; Schrimpf, R. D.; Linten, Dimitri; Mitard, Jerome; Chisholm, M. F.; Pantelides, S. T. (2017) -
Total-dose response of HfO2/Hf-based bipolar resistive memories
Bi, Jinshun; Han, Zhengsheng; McCurdy, Mike; Reed, R. A.; Schrimpf, R. D.; Fleetwood, D. M.; Alles, Michael L.; Weller, Robert A.; Linten, Dimitri; Jurczak, Gosia; Fantini, Andrea (2013-07)