Total ionizing dose effects on strained Ge pMOS FinFETS on bulk Si

Zhang, E. Z; Fleetwood, D. M.; Hatchel, J. A.; Liang, C.; Reed, R.; Alles, M. L.; Schrimpf, R. D.; Linten, Dimitri; Mitard, Jerome; Chisholm, M. F.; Pantelides, S. T.

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Total ionizing dose effects on strained Ge pMOS FinFETS on bulk Si

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2017

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IEEE Transactions on Nuclear Science

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Total ionizing dose effects on strained Ge pMOS FinFETS on bulk Si

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