Total ionizing dose effects on strained Ge pMOS FinFETS on bulk Si

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Authors

Zhang, E. Z; Fleetwood, D. M.; Hatchel, J. A.; Liang, C.; Reed, R.; Alles, M. L.; Schrimpf, R. D.; Linten, Dimitri; Mitard, Jerome; Chisholm, M. F.; Pantelides, S. T.

ISSN

0018-9499

Issue

1

Journal

IEEE Transactions on Nuclear Science

Volume

64

Title

Total ionizing dose effects on strained Ge pMOS FinFETS on bulk Si

Publication type

Journal article

Embargo date

9999-12-31

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