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Articles
Total ionizing dose effects on strained Ge pMOS FinFETS on bulk Si
Publication:
Total ionizing dose effects on strained Ge pMOS FinFETS on bulk Si
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Date
2017
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Zhang, E. Z
;
Fleetwood, D. M.
;
Hatchel, J. A.
;
Liang, C.
;
Reed, R.
;
Alles, M. L.
;
Schrimpf, R. D.
;
Linten, Dimitri
;
Mitard, Jerome
;
Chisholm, M. F.
;
Pantelides, S. T.
Journal
IEEE Transactions on Nuclear Science
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1931
since deposited on 2021-10-24
Acq. date: 2025-12-11
Citations
Metrics
Views
1931
since deposited on 2021-10-24
Acq. date: 2025-12-11
Citations