Browsing by author "Considine, L."
Now showing items 1-17 of 17
-
Chemical mapping of InGaN MQWs
Sharma, N.; Tricker, D.; Thomas, P.; Bougrioua, Zahia; Jacobs, Koen; Cheyns, Jan; Moerman, Ingrid; Thrush, E. J.; Considine, L.; Boyd, A.; Humphreys, C. (2001) -
Chemical mapping of V-defects in InGaN MQWs
Sharma, N.; Tricker, D. M.; Thomas, P. J.; Humphreys, C. J.; Bougrioua, Zahia; Jacobs, Koen; Cheyns, Jan; Moerman, Ingrid; Thrush, T.; Considine, L.; Boyd, A. (2000) -
Chemical ordering in wurtzite InxGa1-xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy
Ruterana, P.; Nouet, G.; Van der Stricht, Wim; Moerman, Ingrid; Considine, L. (1998) -
Epitaxial lateral overgrowth of GaN by OMVPE
Jacobs, Koen; Van der Stricht, Wim; Moerman, Ingrid; Demeester, Piet; Verstuyft, Steven; Caekebeke, Kristien; Van Daele, Peter; Considine, L.; Thrush, E. J. (1998) -
Epitaxial laterial overgrowth of GaN by OMVPE
Jacobs, Koen; Van der Stricht, Wim; Moerman, Ingrid; Demeester, Piet; Verstuyft, Steven; Caekebeke, Kristien; Van Daele, Peter; Considine, L.; Thrush, E. J. (1998) -
Epitaxial laterial overgrowth of GaN on sapphire. An examination of epitaxy quality using synchrotron X-ray topography
McNally, P. J.; Tuomi, T.; Lowney, D.; Jacobs, Koen; Danilewsky, A. N.; Rantamaki, R.; O'Hare, M.; Considine, L. (2001) -
GaN based device structures grown in a close coupled showerhead MOCVD reactor
Thrush, E. J.; Kappers, M. J.; Bougrioua, Zahia; Davies, R. A.; Wallis, R. H.; Phillips, W. A.; Considine, L.; Humphreys, C. J.; Moerman, Ingrid (2001) -
Growth and in situ monitoring of GaN using IR interference effects
Considine, L.; Thrush, E. J.; Crawley, J. A.; Jacobs, Koen; Van der Stricht, Wim; Moerman, Ingrid; Demeester, Piet; Park, G. H.; Hwang, S. J.; Song, J. J. (1998) -
High indium content InGaN films and quantum wells
Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid; Demeester, Piet; Considine, L.; Thrush, E. J.; Crawley, J. A.; Ruterana, P. (1998) -
Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2'' wafer close-spaced vertical rotating disk reactor
Vanhollebeke, Koen; Considine, L.; Moerman, Ingrid; Demeester, Piet; Thrush, E. J.; Crawley, J. A. (1998) -
InGaN/GaN MQW blue light emitting diodes grown by OMVPE
Van der Stricht, Wim; Jacobs, Koen; Caekebeke, Kristien; Verstuyft, S.; Moerman, Ingrid; Van Daele, Peter; Demeester, Piet; Considine, L.; Thrush, E. J. (1998) -
Laser reflectance monitoring of GaN MOCVD growth
Stafford, A.; Irvine, S. J. C.; Bougrioua, Zahia; Jacobs, Koen; Moerman, Ingrid; Thrush, E.; Considine, L.; Crawley, J. (1999) -
Material optimisation for AlGaN/GaN HFET applications
Bougrioua, Zahia; Moerman, Ingrid; Sharma, N.; Wallis, R. H.; Cheyns, Jan; Jacobs, Koen; Thrush, E. J.; Considine, L.; Beanland, R.; Farvacque, J. L.; Humphreys, C. (2001) -
MOVPE growth optimization of high quality InGaN films
Van der Stricht, Wim; Moerman, Ingrid; Demeester, Piet; Considine, L.; Trush, E. J.; Crawley, J. A. (1997) -
Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry
Stafford, A.; Irvine, S. J. C.; Bougrioua, Zahia; Jacobs, Koen; Moerman, Ingrid; Thrush, E. J.; Considine, L. (2000) -
Quantifying the smoothing of GaN epilayers in MOVPE growth by in-situ laser reflectometry
Stafford, A.; Irvine, S. J. C.; Bougrioua, Zahia; Jacobs, Koen; Moerman, Ingrid; Thrush, E. J.; Considine, L.; Crawley., J. (2000) -
Synchrotron x-ray topography studies of epitaxial laterial overgrowth of GaN on sapphire
McNally, P. J.; O'Hare, M.; Tuomi, T.; Rantamaki, R.; Jacobs, Koen; Considine, L.; Danilewsky, A. N. (1999)