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Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2'' wafer close-spaced vertical rotating disk reactor
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2045 since deposited on 2021-10-01
Acq. date: 2025-10-23
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2045 since deposited on 2021-10-01
Acq. date: 2025-10-23
Citations