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Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2'' wafer close-spaced vertical rotating disk reactor

Date

1998
Journal article
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dc.contributor.authorVanhollebeke, Koen
dc.contributor.authorConsidine, L.
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.contributor.authorThrush, E. J.
dc.contributor.authorCrawley, J. A.
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.date.accessioned2021-10-01T09:32:46Z
dc.date.available2021-10-01T09:32:46Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3101
dc.source.beginpage644
dc.source.endpage647
dc.source.issue1_4
dc.source.journalJournal of Crystal Growth
dc.source.volume195
dc.title

Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2'' wafer close-spaced vertical rotating disk reactor

dc.typeJournal article
dspace.entity.typePublication
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