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Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry
Publication:
Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry
Date
2000
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Stafford, A.
;
Irvine, S. J. C.
;
Bougrioua, Zahia
;
Jacobs, Koen
;
Moerman, Ingrid
;
Thrush, E. J.
;
Considine, L.
Journal
J. Crystal Growth
Abstract
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1951
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations
Metrics
Views
1951
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations