Publication:

Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry

Date

2000
Journal article
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dc.contributor.authorStafford, A.
dc.contributor.authorIrvine, S. J. C.
dc.contributor.authorBougrioua, Zahia
dc.contributor.authorJacobs, Koen
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorThrush, E. J.
dc.contributor.authorConsidine, L.
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.accessioned2021-10-14T13:49:51Z
dc.date.available2021-10-14T13:49:51Z
dc.date.embargo9999-12-31
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4765
dc.source.beginpage142
dc.source.endpage148
dc.source.journalJ. Crystal Growth
dc.source.volume221
dc.title

Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry

dc.typeJournal article
dspace.entity.typePublication
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