Browsing by author "Zhang, C.X."
Now showing items 1-3 of 3
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Interface and border traps in Ge pMOSFETs
Fleetwood, Daniel; Simoen, Eddy; Francis, Sarah; Zhang, C.X.; Arora, R.; Zhang, E.X.; Schrimpf, Ronald; Galloway, Ken; Mitard, Jerome; Claeys, Cor (2012) -
Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain
Wang, L.; Zhang, E.X.; Zhang, C.X.; Duan, G.X.; Schrimpf, R.D.; Fleetwood, D.M.; Reed, R.A.; Samsel, I.K.; Hachtel, J.; Alles, M.L.; Witters, Liesbeth; Collaert, Nadine; Linten, Dimitri; Mitard, Jerome; Pantelides, S.T.; Galloway, K.F. (2015) -
Total-dose-irradiation and annealing responses of Ge-pMOSFETs
Zhang, C.X.; Zhang, E.X.; Fleetwood, Dan; Schrimpf, Ron; Galloway, Ken; Simoen, Eddy; Mitard, Jerome; Claeys, Cor (2010)