Total ionizing dose effects on Ge channel pFETs  with raised Si0.55Ge0.45 source drain

Wang, L.; Zhang, E.X.; Zhang, C.X.; Duan, G.X.; Schrimpf, R.D.; Fleetwood, D.M.; Reed, R.A.; Samsel, I.K.; Hachtel, J.; Alles, M.L.; Witters, Liesbeth; Collaert, Nadine; Linten, Dimitri; Mitard, Jerome; Pantelides, S.T.; Galloway, K.F.

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Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain

Date

2015

Proceedings Paper

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Author(s)

Wang, L.

;

Zhang, E.X.

;

Zhang, C.X.

;

Duan, G.X.

;

Schrimpf, R.D.

;

Fleetwood, D.M.

;

Reed, R.A.

;

Samsel, I.K.

;

Hachtel, J.

;

Alles, M.L.

;

;

;

;

;

Pantelides, S.T.

;

Galloway, K.F.

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Acq. date: 2026-02-25

Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain

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