Publication:

Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain

Date

2015
Proceedings Paper
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dc.contributor.authorWang, L.
dc.contributor.authorZhang, E.X.
dc.contributor.authorZhang, C.X.
dc.contributor.authorDuan, G.X.
dc.contributor.authorSchrimpf, R.D.
dc.contributor.authorFleetwood, D.M.
dc.contributor.authorReed, R.A.
dc.contributor.authorSamsel, I.K.
dc.contributor.authorHachtel, J.
dc.contributor.authorAlles, M.L.
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCollaert, Nadine
dc.contributor.authorLinten, Dimitri
dc.contributor.authorMitard, Jerome
dc.contributor.authorPantelides, S.T.
dc.contributor.authorGalloway, K.F.
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.accessioned2021-10-23T00:51:21Z
dc.date.available2021-10-23T00:51:21Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26158
dc.source.beginpage22
dc.source.conferenceIEEE Nuclear & Space Radiation Effects Conference - NSREC
dc.source.conferencedate13/07/2015
dc.source.conferencelocationBoston, MA USA
dc.source.endpage25
dc.title

Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain

dc.typeProceedings paper
dspace.entity.typePublication
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