Browsing by author "Jacobs, B."
Now showing items 1-8 of 8
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Chemical role of SF6 in a SiCl4-based reactive ion etching of GaN
Karouta, F.; Jacobs, B.; Kramer, M. C. J. C. M.; Jacobs, Koen; Moerman, Ingrid (1999) -
Highly chemical reactive ion etching of gallium nitride
Karouta, F.; Jacobs, B.; Moerman, Ingrid; Jacobs, Koen; Weyher, J. L.; Nowak, G.; Crane, R.; Hageman, P. (2000) -
Highly chemical reactive ion etching of gallium nitride
Karouta, F.; Jacobs, B.; Moerman, I.; Jacobs, K.; Weyher, J.L.; Porowski, S.; Crane, R.; Hageman, P.R. (2000) -
Ideal chemistry for reactive ion etching of GaN
Karouta, F.; Jacobs, B.; Jacobs, Koen; Moerman, Ingrid (1999) -
Ideal chemistry for reactive ion etching of GaN
Karouta, F.; Jacobs, B.; Jacobs, Koen; Moerman, Ingrid (1999) -
Implementation approaches for spare capacity in meshed WDM transport networks
Van Caenegem, Bart; Jacobs, B.; Demeester, Piet (1997) -
Investigation on p-contacts in Mg-doped GaN and the effect of various pre-treatments
Karouta, F.; Ruscassié, R; Kramer, M.C.J.C.M.; Jacobs, B.; Jacobs, Koen; Moerman, Ingrid (2001) -
Side-wall morphology in reactive ion etching of GaN
Karouta, F.; Jacobs, B.; Jacobs, Koen; Moerman, Ingrid (1999)