Browsing by author "Wang, Wan-Chih"
Now showing items 1-5 of 5
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Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacks
Pawlak, Malgorzata; Swerts, Johan; Popovici, Mihaela Ioana; Kaczer, Ben; Kim, Min-Soo; Wang, Wan-Chih; Tomida, Kazuyuki; Govoreanu, Bogdan; Delmotte, Joris; Afanas'ev, Valeri; Schaekers, Marc; Vandervorst, Wilfried; Kittl, Jorge (2012) -
Effect of the composition on the bandgap width of high-k MexTiyOz (Me=Hf,Ta, Sr)
Wang, Wan-Chih; Badylevich, V.; Afanas'ev, V.V.; Stesmans, Andre; Popovici, Mihaela Ioana; Tomida, Kazuyuki; Menou, Nicolas; Kittl, Jorge; Lukosius, M.; Baristiran Kaynak, C.; Wenger, Ch. (2011) -
Enabling 3X nm DRAM: Record low leakage 0.4 nm EOT MIM capacitors with novel stack engineering
Pawlak, Malgorzata; Popovici, Mihaela Ioana; Swerts, Johan; Tomida, Kazuyuki; Kim, Min-Soo; Kaczer, Ben; Opsomer, Karl; Schaekers, Marc; Favia, Paola; Bender, Hugo; Vrancken, Christa; Govoreanu, Bogdan; Demeurisse, Caroline; Wang, Wan-Chih; Afanasiev, Valeri; Debusschere, Ingrid; Altimime, Laith; Kittl, Jorge (2010) -
Non-linear dielectric constant increase with Ti composition in high-k ALD-HfTiOx films after O2 crystallization annealing
Tomida, Kazuyuki; Popovici, Mihaela Ioana; Opsomer, Karl; Menou, Nicolas; Wang, Wan-Chih; Delabie, Annelies; Swerts, Johan; Steenbergen, Johnny; Kaczer, Ben; Van Elshocht, Sven; Detavernier, Christophe; Afanasiev, Valeri; Wouters, Dirk; Kittl, Jorge (2010) -
Towards 1X DRAM: Improved leakage 0.4 nm EOT STO-based MIMcap and explanation of leakage reduction mechanism showing further potential
Pawlak, Malgorzata; Kaczer, Ben; Wang, Wan-Chih; Kim, Min-Soo; Popovici, Mihaela Ioana; Swerts, Johan; Tomida, Kazuyuki; Opsomer, Karl; Schaekers, Marc; Vrancken, Christa; Govoreanu, Bogdan; Belmonte, Attilio; Demeurisse, Caroline; Debusschere, Ingrid; Altimime, Laith; Afanasiev, Valeri; Kittl, Jorge (2011)