Browsing by author "Hackbarth, T."
Now showing items 1-4 of 4
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Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies
Fobelets, Kristel; Jeamsaksiri, Wutthinan; Papavasilliou, C.; Vilches, T.; Gaspari, V.; Velazquez-Perez, J.E.; Michelakis, K.; Hackbarth, T.; König, U. (2004) -
Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures by Si+ ion implantation
Holländer, B.; Buca, D.M.; Lenk, S.; Mantl, S.; Herzog, H.J.; Hackbarth, T.; Loo, Roger; Caymax, Matty; Mörschbächer, M.; Fichtner, P.F.P. (2004) -
Strain relaxation of SiGe buffers on Si and SOI wafers induced by He+ ion implantation and thermal annealing
Mantl, S.; Holländer, B.; Hüging, N.; Luysberg, M.; Lenk, St.; Hogg, S.M.; Herzog, H.-J.; Hackbarth, T.; Loo, Roger; Bauer, M. (2003) -
Thin strain relaxed SiGe buffer layers on Si and SOI wafers made by He+ ion implantation and annealing
Mantl, S.; Holländer, B.; Hüging, N.; Luysberg, M.; Lenk, S.; Hogg, S.M.; Herzog, H.J.; Hackbarth, T.; Loo, Roger; Bauer, R. (2003)