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Thin strain relaxed SiGe buffer layers on Si and SOI wafers made by He+ ion implantation and annealing
Publication:
Thin strain relaxed SiGe buffer layers on Si and SOI wafers made by He+ ion implantation and annealing
Date
2003
Meeting abstract
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Mantl, S.
;
Holländer, B.
;
Hüging, N.
;
Luysberg, M.
;
Lenk, S.
;
Hogg, S.M.
;
Herzog, H.J.
;
Hackbarth, T.
;
Loo, Roger
;
Bauer, R.
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1930
since deposited on 2021-10-15
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Acq. date: 2025-12-08
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Views
1930
since deposited on 2021-10-15
1
last month
1
last week
Acq. date: 2025-12-08
Citations