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Thin strain relaxed SiGe buffer layers on Si and SOI wafers made by He+ ion implantation and annealing

Date

2003
Meeting abstract
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dc.contributor.authorMantl, S.
dc.contributor.authorHolländer, B.
dc.contributor.authorHüging, N.
dc.contributor.authorLuysberg, M.
dc.contributor.authorLenk, S.
dc.contributor.authorHogg, S.M.
dc.contributor.authorHerzog, H.J.
dc.contributor.authorHackbarth, T.
dc.contributor.authorLoo, Roger
dc.contributor.authorBauer, R.
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-15T05:35:29Z
dc.date.available2021-10-15T05:35:29Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7859
dc.source.beginpage117
dc.source.conferenceAbstracts Book ICSI3: 3rd International Conference on SiGe(C) Epitaxy and Heterostructures
dc.source.conferencedate9/03/2003
dc.source.conferencelocationSanta Fe, NM USA
dc.title

Thin strain relaxed SiGe buffer layers on Si and SOI wafers made by He+ ion implantation and annealing

dc.typeMeeting abstract
dspace.entity.typePublication
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