Browsing by author "Martino, J. A."
Now showing items 1-5 of 5
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50 nm Gate Length FinFET Biosensor & the Outlook for Single-Molecule Detection
Santermans, Sybren; Barge, David; Hellings, Geert; Bergfeld Mori, Carlos; Migacz, Konrad Joseph; Rip, Jens; Spampinato, Valentina; Vos, Rita; Du Bois, Bert; Ray Chaudhuri, Ashesh; Martino, J. A.; Heyns, Marc; Severi, Simone; Van Roy, Wim; Martens, Koen (2020) -
Comparison between analog performance of standard and strained triple-gate nFinFETs
Pavanello, M. A.; Martino, J. A.; Simoen, Eddy; Rooyackers, Rita; Collaert, Nadine; Claeys, Cor (2008) -
Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications
Silva, V. C. P.; Martino, J. A.; Simoen, Eddy; Veloso, Anabela; Agopian, P. G. D. (2023) -
Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 degrees C
Agopian, P. G. D.; Carmo, G. J.; Martino, J. A.; Simoen, Eddy; Peralagu, Uthayasankaran; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine (2021) -
Impact of the diameter of vertical nanowire-tunnel FETs with Si and SiGe source composition on analog parameters
Bordallo, C. C. M; Sivieri, V. B; Martino, J. A.; Agopian, P. G. D; Rooyackers, Rita; Vandooren, Anne; Simoen, Eddy; Thean, Aaron; Claeys, Cor (2015)