Browsing by author "Kasprowicz, Bryan S."
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A practical alternating PSM modeling and OPC approach to deal with 3D mask effects for the 65nm node and beyond
Drapeau, Martin; van Adrichem, Paul.J.M.; Van Look, Lieve; Kasprowicz, Bryan S. (2005) -
Process, design and optical proximity correction requirements for the 65nm device generation
Lucas, Kevin; Montgomery, Patrick; Litt, Lloyd C.; Conley, Will; Postnikov, Sergei V.; Wu, Wei; Yuan, Chi-Min; Olivares, Marc; Strozewski, Kirk; Carter, Russell L.; Vasek, James; Smith, David; Fanucchi, Eric L.; Wiaux, Vincent; Vandenberghe, Geert; Toublan, Olivier; Verhappen, Arjan; Kuijten, Jan P.; van Wingerden, Johannes; Kasprowicz, Bryan S.; Tracy, Jeffrey W.; Progler, Christopher J.; Shiro, Eugene; Topouzov, Igor; Wimmer, Karl; Roman, Bernard J. (2003)