Browsing by author "Balaji, Yashwanth"
Now showing items 1-20 of 23
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Chemical vapor deposition of 2D tin sulfides using SnCl4 and H2S
Zhang, Haodong; Balaji, Yashwanth; Nalin Mehta, Ankit; Caymax, Matty; Radu, Iuliana; Vandervorst, Wilfried; Delabie, Annelies (2018) -
Combining electrical AFM techniques for the study of exfoliated MoS2 devices
Mascaro, Marco; Celano, Umberto; Balaji, Yashwanth; Ludwig, Jonathan; Paredis, Kristof; Asselberghs, Inge; Radu, Iuliana; Vandervorst, Wilfried (2018) -
Controlled sulfurization process for the synthesis of large area MoS2 films and MoS2-WS2 heterostructures
Chiappe, Daniele; Asselberghs, Inge; Sutar, Surajit; Iacovo, Serena; Afanasiev, Valeri; Stesmans, Andre; Balaji, Yashwanth; Peters, Lisanne; Heyne, Markus; Mannarino, Manuel; Vandervorst, Wilfried; Sayan, Safak; Huyghebaert, Cedric; Caymax, Matty; Heyns, Marc; De Gendt, Stefan; Radu, Iuliana; Thean, Aaron (2016) -
Demonstration of 2e12/cm-2-eV-1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5nm EOT
Gaur, Abhinav; Balaji, Yashwanth; Lin, Dennis; Adelmann, Christoph; Van Houdt, Jan; Heyns, Marc; Mocuta, Dan; Radu, Iuliana (2017) -
Devices and circuits using novel 2-D materials: a perspective for future VLSI systems
Resta, Giovanni V.; Leonhardt, Alessandra; Balaji, Yashwanth; De Gendt, Stefan; Gaillardon, Pierre-Emmanuel; De Micheli, Giovanni (2019) -
Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors
Resta, Giovanni; Balaji, Yashwanth; Lin, Dennis; Radu, Iuliana; Catthoor, Francky; Gaillardon, Pierre-Emmanuel; De Micheli, Giovanni (2018) -
Doping-free complementary logic gates enabled by two-dimensional polarity-controllable transistors
Resta, Giovanni; Balaji, Yashwanth; Lin, Dennis; Radu, Iuliana; Catthoor, Francky; Gaillardon, Pierre-Emmanuel; De Micheli, Giovanni (2018) -
Epitaxial registry and crystallinity of MoS2 via molecular beam and metalorganic vapor phase van der Waals epitaxy
Mortelmans, Wouter; El Kazzi, Salim; Groven, Benjamin; Nalin Mehta, Ankit; Balaji, Yashwanth; De Gendt, Stefan; Heyns, Marc; Merckling, Clement (2020) -
Formation mechanism of 2D SnS2 and SnS by chemical vapor deposition using SnCl4 and H2S
Zhang, Haodong; Balaji, Yashwanth; Nalin Mehta, Ankit; Heyns, Marc; Caymax, Matty; Radu, Iuliana; Vandervorst, Wilfried; Delabie, Annelies (2018) -
Formation mechanism of 2D SnS2 bycvd using SnCl4 and H2S
Zhang, Haodong; Balaji, Yashwanth; Nalin Mehta, Ankit; Heyns, Marc; Caymax, Matty; Radu, Iuliana; Vandervorst, Wilfried; Delabie, Annelies (2018) -
Fundamental limitation of van der Waals homoepitaxy by stacking fault formation in WSe2
Mortelmans, Wouter; Nalin Mehta, Ankit; Balaji, Yashwanth; El Kazzi, Salim; Sergeant, Stefanie; Houssa, Michel; De Gendt, Stefan; Heyns, Marc; Merckling, Clement (2020) -
Heterojunction tunnel FETs using 2D materials as channel
Balaji, Yashwanth (2020-09) -
Molecular doping of MoS2 transistors by self-assembled oleylamine networks
Lockhart de la Rosa, Cesar Javier; Phillipson, Roald; Teyssandier, Joan; Adisoejoso, Jinne; Balaji, Yashwanth; Huyghebaert, Cedric; Radu, Iuliana; Heyns, Marc; De Feyter, Steven; De Gendt, Stefan (2016) -
MoS2/MoTe2 heterostructure tunnel FETs using gated Schottky contacts
Balaji, Yashwanth; Smets, Quentin; Szabo, Aron; Mascaro, Marco; Lin, Dennis; Asselberghs, Inge; Radu, Iuliana; Luisier, Mathieu; Groeseneken, Guido (2020) -
Novel Insights into the Homo-/Heteroepitaxy of van der Waals Materials
Mortelmans, Wouter; Nalin Mehta, Ankit; Balaji, Yashwanth; De Smet, Karel; El Kazzi, Salim; Houssa, Michel; De Gendt, Stefan; Heyns, Marc; Merckling, Clement (2020) -
On the van der Waals epitaxy of homo-/heterostructures of transition metal dichalcogenides
Mortelmans, Wouter; Nalin Mehta, Ankit; Balaji, Yashwanth; Sergeant, Stefanie; Houssa, Michel; De Gendt, Stefan; Heyns, Marc; Merckling, Clement (2020) -
Polarity control in WSe2 double-gate transistors
Resta, Giovanni; Sutar, Surajit; Balaji, Yashwanth; Lin, Dennis; Raghavan, Praveen; Radu, Iuliana; Catthoor, Francky; Thean, Aaron; Gaillardon, Pierre-Emmanuel; De Micheli, Giovanni (2016) -
Polarity-controllable 2-dimensional transistors: experimental demonstration and scaling opportunities
Resta, Giovanni; Balaji, Yashwanth; Agarwal Kumar, Tarun; Radu, Iuliana; Lin, Dennis; Catthoor, Francky; Gaillardon, PE; De Micheli, Nanni (2017) -
Preferential in-plane alignment, twinning and strain in hetero- and homo-epitaxial growth of 2D selenides
Mortelmans, Wouter; Nalin Mehta, Ankit; Balaji, Yashwanth; El Kazzi, Salim; Vanhaeren, Danielle; Conard, Thierry; Meersschaut, Johan; Nuytten, Thomas; De Gendt, Stefan; Heyns, Marc; Merckling, Clement (2019) -
Towards high-performance polarity-controllable FETs with 2D materials
Resta, Giovanni; Gonzalez, Jorge Romero; Balaji, Yashwanth; Agarwal Kumar, Tarun; Lin, Dennis; Catthoor, Francky; Radu, Iuliana; De Micheli, Giovanni; Gaillardon, Pierre-Emmanuel (2018)