Browsing by author "Saraswat, Krishna"
Now showing items 1-5 of 5
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56Gb/s germanium waveguide electro-absorption modulator
Srinivasan, Ashwyn; Pantouvaki, Marianna; Gupta, Shashank; Chen, Hongtao; Verheyen, Peter; Lepage, Guy; Roelkens, Gunther; Saraswat, Krishna; Van Thourhout, Dries; Absil, Philippe; Van Campenhout, Joris (2016) -
Characteristics of surface states and charge neutrality level in Ge
Kuzum, Duygu; Martens, Koen; Krishnamohan, Tejas; Saraswat, Krishna (2009) -
Experimental demonstration of high source velocity and its enhancement by uniaxial stress in Ge PFETs
Kobabyashi, Masaharu; Mitard, Jerome; Irisawa, Toshihumi; Hoffmann, Thomas Y.; Meuris, Marc; Saraswat, Krishna; Nishi, Yoshio; Heyns, Marc (2010) -
On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
Martens, Koen; Chui, Chi On; Brammertz, Guy; De Jaeger, Brice; Kuzum, Duygu; Meuris, Marc; Heyns, Marc; Krishnamohan, Tejas; Saraswat, Krishna; Maes, Herman; Groeseneken, Guido (2008) -
On the high-field transport and uniaxial stress effect in Ge PFETs
Kobayashi, Masaharu; Mitard, Jerome; Irisawa, Toshifumi; Hoffmann, Thomas Y.; Meuris, Marc; Saraswat, Krishna; Nishi, Yoshio; Heyns, Marc (2011)