Browsing by author "Fantini, F."
Now showing items 1-5 of 5
-
Hot electron degradation effects in Al0.25Ga0.75As/In0.2Ga0.8As/GaAs PHEMTs
Cova, P.; Menozzi, R.; Lacey, D.; Baeyens, Yves; Fantini, F. (1995) -
Hot electron degradation of the DC and microwave performance of InAlAs/InGaAs/InP HEMTs
Menozzi, R; Borgarino, M.; Baeyens, Yves; Van Hove, Marleen; Fantini, F. (1996) -
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's
Menozzi, R.; Borgarino, M.; Baeyens, Yves; Van Hove, Marleen; Fantini, F. (1997) -
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTs
Menozzi, R.; Borgarino, M.; Cova, P.; Baeyens, Yves; Fantini, F. (1996) -
The effect of passivation on the hot electron degradation of lattice-matched InAlAs/InGaAs/InP HEMTs
Menozzi, R.; Borgarino, M.; Baeyens, Yves; van der Zanden, Koen; Van Hove, Marleen; Fantini, F. (1997)