Browsing by author "Marsland, John"
Now showing items 1-5 of 5
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Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector
Chai, Zheng; Zhang, Weidong; Clima, Sergiu; Hatem, Firas; Degraeve, Robin; Diao, Qihui; Zhang, Jian Fu; Freitas, Pedro; Marsland, John; Fantini, Andrea; Garbin, Daniele; Goux, Ludovic; Kar, Gouri Sankar (2021) -
Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing scheme
Hatem, Firas Odai Hatem; Chai, Z.; Zhang, Wei; Fantini, Andrea; Degraeve, Robin; Clima, Sergiu; Garbin, Daniele; Robertson, J.; Guo, Y,; Zhang, J.F.; Marsland, John; Freitas, Pedro; Goux, Ludovic; Kar, Gouri Sankar (2019) -
Stochastic computing based on volatile GeSe ovonic threshold switching selectors
Chai, Zheng; Freitas, Pedro; Zhang, Weidong; Hatem, Firas; Degraeve, Robin; Clima, Sergiu; Fu Zhang, Jian; Marsland, John; Fantini, Andrea; Garbin, Daniele; Goux, Ludovic; Kar, Gouri Sankar (2020) -
TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device
Ma, Jigang; Chai, Zheng; Zhang, Wei Dong; Zhang, Jian Fu; Marsland, John; Govoreanu, Bogdan; Degraeve, Robin; Goux, Ludovic; Kar, Gouri Sankar (2019) -
The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique
Chai, Zheng; Zhang, Weidong; Freitas, Pedro; Hatem, Firas; Zhang, Jian Fu; Marsland, John; Govoreanu, Bogdan; Goux, Ludovic; Kar, Gouri Sankar; Hall, Steve; Chalker, Paul; Robertson, john (2018)