The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique

Chai, Zheng; Zhang, Weidong; Freitas, Pedro; Hatem, Firas; Zhang, Jian Fu; Marsland, John; Govoreanu, Bogdan; Goux, Ludovic; Kar, Gouri Sankar; Hall, Steve; Chalker, Paul; Robertson, john

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The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique

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2018

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IEEE Electron Device Letters

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Acq. date: 2026-02-27

The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique

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