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The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique
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The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique
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Date
2018
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Chai, Zheng
;
Zhang, Weidong
;
Freitas, Pedro
;
Hatem, Firas
;
Zhang, Jian Fu
;
Marsland, John
;
Govoreanu, Bogdan
;
Goux, Ludovic
;
Kar, Gouri Sankar
;
Hall, Steve
;
Chalker, Paul
;
Robertson, john
Journal
IEEE Electron Device Letters
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1950
since deposited on 2021-10-25
Acq. date: 2026-02-26
Citations
Statistics
Views
1950
since deposited on 2021-10-25
Acq. date: 2026-02-26
Citations