Publication:

The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique

Date

2018
Journal article
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dc.contributor.authorChai, Zheng
dc.contributor.authorZhang, Weidong
dc.contributor.authorFreitas, Pedro
dc.contributor.authorHatem, Firas
dc.contributor.authorZhang, Jian Fu
dc.contributor.authorMarsland, John
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorGoux, Ludovic
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorHall, Steve
dc.contributor.authorChalker, Paul
dc.contributor.authorRobertson, john
dc.contributor.imecauthorFreitas, Pedro
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-25T17:07:06Z
dc.date.available2021-10-25T17:07:06Z
dc.date.issued2018
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30380
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8354795
dc.source.beginpage955
dc.source.endpage958
dc.source.issue7
dc.source.journalIEEE Electron Device Letters
dc.source.volume39
dc.title

The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique

dc.typeJournal article
dspace.entity.typePublication
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