Browsing by author "Danilewsky, A. N."
Now showing items 1-4 of 4
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Epitaxial laterial overgrowth of GaN on sapphire. An examination of epitaxy quality using synchrotron X-ray topography
McNally, P. J.; Tuomi, T.; Lowney, D.; Jacobs, Koen; Danilewsky, A. N.; Rantamaki, R.; O'Hare, M.; Considine, L. (2001) -
Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron x-ray topography, electrical data and Raman spectroscopy
McNally, P. J.; Curley, J. W.; Bolt, M.; Reader, A.; Tuomi, T.; Rantamaki, R.; Danilewsky, A. N.; De Wolf, Ingrid (1999) -
Synchrotron x-ray topography studies of epitaxial laterial overgrowth of GaN on sapphire
McNally, P. J.; O'Hare, M.; Tuomi, T.; Rantamaki, R.; Jacobs, Koen; Considine, L.; Danilewsky, A. N. (1999) -
White beam synchroton x-ray topography and x-ray diffraction measurements of epitaxial lateral overgrowth of GaN
Chen, W. M.; McNally, P. J.; Jacobs, Koen; Tuomi, T.; Danilewsky, A. N.; Lowney, D.; Kanatharana, J.; Knuuttila, L.; Riikonen, J. (2001)