Browsing by author "Gong, H."

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Pulsed-laser induced single-event transients in InGaAs FinFETs on bulk silicon substrates

Gong, H.; Ni, K.; Zhang, E.X.; Sternberg, A. L.; Kuzub, J.A.; Alles, M.L.; Reed, R.; Fleetwood, D.; Schrimpf, R.; Waldron, Niamh; Kunert, Bernardette; Linten, Dimitri (2019)
Total-ionizing-dose effects and low-frequency noise in 30-nm gate-length Bulk and SOI FinFETs with SiO2/HfO2 gate delectrics

Gorchichko, M.; Cao, Y.; Zhang, E.X.; Yan, D.; Gong, H.; Zhao, S.E.; Wang, P.; Jiang, R.; Liang, C.; Fleedwood, D.M.; Schrimpf, R.D.; Reed, R.A.; Linten, Dimitri (2020)