Authors

Gorchichko, M.; Cao, Y.; Zhang, E.X.; Yan, D.; Gong, H.; Zhao, S.E.; Wang, P.; Jiang, R.; Liang, C.; Fleedwood, D.M.; Schrimpf, R.D.; Reed, R.A.; Linten, Dimitri

ISSN

0018-9499

Issue

1

Journal

IEEE Transactions on Nuclear Science

Volume

67

Title

Total-ionizing-dose effects and low-frequency noise in 30-nm gate-length Bulk and SOI FinFETs with SiO2/HfO2 gate delectrics

Publication type

Journal article

Embargo date

9999-12-31