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Total-ionizing-dose effects and low-frequency noise in 30-nm gate-length Bulk and SOI FinFETs with SiO2/HfO2 gate delectrics
Publication:
Total-ionizing-dose effects and low-frequency noise in 30-nm gate-length Bulk and SOI FinFETs with SiO2/HfO2 gate delectrics
Date
2020
Journal article
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46031.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Gorchichko, M.
;
Cao, Y.
;
Zhang, E.X.
;
Yan, D.
;
Gong, H.
;
Zhao, S.E.
;
Wang, P.
;
Jiang, R.
;
Liang, C.
;
Fleedwood, D.M.
;
Schrimpf, R.D.
;
Reed, R.A.
;
Linten, Dimitri
Journal
IEEE Transactions on Nuclear Science
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1935
since deposited on 2021-10-28
Acq. date: 2025-10-23
Citations
Metrics
Views
1935
since deposited on 2021-10-28
Acq. date: 2025-10-23
Citations