Publication:

Total-ionizing-dose effects and low-frequency noise in 30-nm gate-length Bulk and SOI FinFETs with SiO2/HfO2 gate delectrics

Date

2020
Journal article
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0001-8434-1838
cris.virtualsource.department63eea5a8-b81a-4bb2-aa67-715ba610971a
cris.virtualsource.orcid63eea5a8-b81a-4bb2-aa67-715ba610971a
dc.contributor.authorGorchichko, M.
dc.contributor.authorCao, Y.
dc.contributor.authorZhang, E.X.
dc.contributor.authorYan, D.
dc.contributor.authorGong, H.
dc.contributor.authorZhao, S.E.
dc.contributor.authorWang, P.
dc.contributor.authorJiang, R.
dc.contributor.authorLiang, C.
dc.contributor.authorFleedwood, D.M.
dc.contributor.authorSchrimpf, R.D.
dc.contributor.authorReed, R.A.
dc.contributor.authorLinten, Dimitri
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.accessioned2021-10-28T22:02:56Z
dc.date.available2021-10-28T22:02:56Z
dc.date.embargo9999-12-31
dc.date.issued2020
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35191
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8937016
dc.source.beginpage245
dc.source.endpage252
dc.source.issue1
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.volume67
dc.title

Total-ionizing-dose effects and low-frequency noise in 30-nm gate-length Bulk and SOI FinFETs with SiO2/HfO2 gate delectrics

dc.typeJournal article
dspace.entity.typePublication
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