Browsing by author "Neimash, V."
Now showing items 1-12 of 12
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A deep level study of high-temperature electron-irradiated n-type Cz silicon
Simoen, Eddy; Claeys, Cor; Neimash, V.; Kraitchinskii, A.; Kras'ko, M.; Tishenko, V.; Voitovich, V. (2003) -
A deep level study of high-temperature electron-irradiated n-type Cz silicon
Simoen, Eddy; Claeys, Cor; Neimash, V.; Kraitchinskii, A.; Kras'ko, M.; Tischenko, V.; Voitovych, V. (2004) -
Behavior of n-Si electrical parameters after a high-temperature 1 MeV electron irradiation
Neimash, V.; Kraitchinskii, A.; Kras'ko, N.; Voitovych, V.; Simoen, Eddy; Claeys, Cor (2002) -
Deep levels in high-temperature 1 MeV electron irradiated n-type czochralski silicon
Simoen, Eddy; Rafi, Joan Marc; Claeys, Cor; Neimash, V.; Kraitchinski, A.; Kras'ko, M.; Tischenko, V.; Voitovych, V.; Versluys, J.; Clauws, P. (2003) -
DLTS studies of high-temperature electron irradiated Cz n-Si
Neimash, V.; Kras'ko, M.; Kraitchinskii, A.; Voytivych, V.; Tishenko, V.; Simoen, Eddy; Rafi, Joan Marc; Claeys, Cor; Versuys, J.; De Gryse, O.; Clauws, P. (2004) -
Electrically active defects in irradiated n-Type Czochralski silicon doped with group IV impurities
David, M.L.; Simoen, Eddy; Claeys, Cor; Neimash, V.; Kras'ko, M.; Kraitchinski, A.; Voytovych, V.; Kabaldin, A.; Barbot, J.F. (2004) -
Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities
David, Marie-Laure; Simoen, Eddy; Claeys, Cor; Neimash, V.; Kras'ko, M.; Kraitchinskii, A.; Voytovych, V.; Kabaldin, A.; Barbot, J.F. (2005) -
High-temperature electron irradiation effects on the electrical parameters of n-type Cz silicon
Neimash, V.; Kraitchinskii, A.; Kras'ko, N.; Tischenko, V.; Voitovych, V.; Simoen, Eddy; Claeys, Cor (2002) -
High-temperature electron-irradiation induced deep levels in n-type Cz silicon
Simoen, Eddy; Claeys, Cor; Neimash, V.; Kraitchinskii, A.; Kras'ko, M.; Tischenko, V.; Voitovych, V.; Versluys, J.; Clauws, P. (2003) -
Impact of high-temperature electron irradiation on the electrical parameters of n-type CZ silicon
Neimash, V.; Kraitshinskii, A.; Kras'ko, N.; Tischenko, V.; Voitovych, V.; Simoen, Eddy; Claeys, Cor (2002) -
On the effect of lead on irradiation induced defects in silicon
David, M.L.; Simoen, Eddy; Claeys, Cor; Neimash, V.; Kras'ko, M.; Kraitchinskii, A.; Voytovych, V.; Kabaldin, A.; Barbot, J.F. (2005) -
Radiation-induced deep levels in lead and tin doped n-type czochralski silicon
David, Marie-Laure; Simoen, Eddy; Claeys, Cor; Neimash, V.; Kras'ko, M.; Kraitchinskii, A.; Voytovych, V.; Tishchenko, V.; Barbot, J.F. (2004)