Browsing by author "Thoan, N.H."
Now showing items 1-4 of 4
-
Atomic and electrical characterisation of amorphous silicon passivation layers
O'Sullivan, Barry; Thoan, N.H.; Jivanescu, M.; Pantisano, Luigi; Bearda, Twan; Dross, Frederic; Gordon, Ivan; Afanasiev, Valeri; Stesmans, Andre; Poortmans, Jef (2012) -
Charge instability of atomic-layer deposited TaSiOx insulators on Si, InP, and In0.53Ga0.47As
Afanasiev, Valeri; Chou, H.Y.; Thoan, N.H.; Adelmann, Christoph; Lin, Dennis; Houssa, Michel; Stesmans, Andre (2012) -
Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GeSi1-x/SiO2/(100)Si structures with nm-thin GexSi1-x layers
Madia, O.; Nguyen, A.P.D.; Thoan, N.H.; Afanasiev, Valeri; Stesmans, Andre; Souriau, Laurent; Slotte, J.; Tuomisto, F. (2014) -
Internal photoemission at interfaces of ALD TaiOx insulating layers deposited on Si, InP and In0.53Ga0.47As
Chou, H.-Y.; Afanasiev, Valeri; Thoan, N.H.; Adelmann, Christoph; Lin, Dennis; Houssa, Michel; Stesmans, Andre (2012)