Browsing by author "Verbrugge, Beatrijs"

Now showing items 1-2 of 2

Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized Plasma Enhanced Atomic Layer Deposition (PEALD) process for TiN electrode

Chen, Yangyin; Goux, Ludovic; Pantisano, Luigi; Swerts, Johan; Adelmann, Christoph; Mertens, Sofie; Afanasiev, Valeri; Wang, Xin Peng; Govoreanu, Bogdan; Degraeve, Robin; Kubicek, Stefan; Paraschiv, Vasile; Verbrugge, Beatrijs; Jossart, Nico; Altimime, Laith; Jurczak, Gosia; Kittl, Jorge; Groeseneken, Guido; Wouters, Dirk (2011)
Investigation of forming and its controllability in novel HfO2-based 1T1R 40nm-crossbar RRAM cells

Govoreanu, Bogdan; Kubicek, Stefan; Kar, Gouri Sankar; Chen, Yangyin; Paraschiv, Vasile; Rakowski, Michal; Degraeve, Robin; Goux, Ludovic; Clima, Sergiu; Jossart, Nico; Adelmann, Christoph; Richard, Olivier; Raes, Thomas; Vangoidsenhoven, Diziana; Vandeweyer, Tom; Tielens, Hilde; Kellens, Kristof; Devriendt, Katia; Heylen, Nancy; Brus, Stephan; Verbrugge, Beatrijs; Pantisano, Luigi; Bender, Hugo; Pourtois, Geoffrey; Kittl, Jorge; Wouters, Dirk; Altimime, Laith; Jurczak, Gosia (2011)