Authors
Chen, Yangyin;
Goux, Ludovic;
Pantisano, Luigi;
Swerts, Johan;
Adelmann, Christoph;
Mertens, Sofie;
Afanasiev, Valeri;
Wang, Xin Peng;
Govoreanu, Bogdan;
Degraeve, Robin;
Kubicek, Stefan;
Paraschiv, Vasile;
Verbrugge, Beatrijs;
Jossart, Nico;
Altimime, Laith;
Jurczak, Gosia;
Kittl, Jorge;
Groeseneken, Guido;
Wouters, Dirk
Conference
IEEE International Interconnect Technology Conference and Materials for Advanced Metallization - IITC/MAM
Title
Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized Plasma Enhanced Atomic Layer Deposition (PEALD) process for TiN electrode
Publication type
Proceedings paper
Embargo date
9999-12-31
