Browsing by author "Govoreanu, Bogdan"
Now showing items 1-20 of 188
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10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Govoreanu, Bogdan; Kar, Gouri Sankar; Chen, Yangyin; Paraschiv, Vasile; Kubicek, Stefan; Fantini, Andrea; Radu, Iuliana; Goux, Ludovic; Clima, Sergiu; Degraeve, Robin; Jossart, Nico; Richard, Olivier; Vandeweyer, Tom; Seo, Kyungah; Hendrickx, Paul; Pourtois, Geoffrey; Bender, Hugo; Altimime, Laith; Wouters, Dirk; Kittl, Jorge; Jurczak, Gosia (2011) -
300 mm silicon quantum computing: a silicon-based platform for quantum computing device technologies
Kubicek, Stefan; Govoreanu, Bogdan; Jussot, Julien; Chan, BT; Dumoulin Stuyck, Nard; Mohiyaddin, Fahd Ayyalil; Li, Roy; Simion, George; Ivanov, Tsvetan; Lee, James; Radu, Iuliana (2019) -
A combinatorial study of SiGeAsTe thin films for application as an Ovonic threshold switch selector
Devulder, Wouter; Garbin, Daniele; Clima, Sergiu; Donadio, Gabriele Luca; Fantini, Andrea; Govoreanu, Bogdan; Detavernier, Christophe; Chen, Larry; Miller, Michael; Goux, Ludovic; Van Elshocht, Sven; Swerts, Johan; Delhougne, Romain; Kar, Gouri Sankar (2022-07-01) -
A comparison between various empirical models for TCAD purposes
Govoreanu, Bogdan; Suykens, J.; Schoenmaker, Wim; Amza, Claudiu; Dima, G.; Vandewalle, Joseph; Profirescu, M. (2000) -
A consistent model for oxide trap profiling with the trap spectroscopy by charge injection and sensing (TSCIS) technique
Cho, Moon Ju; Degraeve, Robin; Roussel, Philippe; Govoreanu, Bogdan; Kaczer, Ben; Zahid, Mohammed; Simoen, Eddy; Arreghini, Antonio; Jurczak, Gosia; Van Houdt, Jan; Groeseneken, Guido (2010) -
A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-k materials for Flash memory applications
Zheng, X. F.; Zhang, W. .D; Govoreanu, Bogdan; Zhang, J. F.; Van Houdt, Jan (2009) -
A figure of merit for flash memory multi-leyer tunnel dielectrics
Govoreanu, Bogdan; Blomme, Pieter; Rosmeulen, Maarten; Van Houdt, Jan; De Meyer, Kristin (2001) -
A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration
Li, Roy; Dumoulin Stuyck, Nard; Kubicek, Stefan; Jussot, Julien; Chan, BT; Mohiyaddin, Fahd Ayyalil; Elsayed, Asser; Shehata, Mohamed; Simion, George; Godfrin, Clement; Canvel, Yann; Ivanov, Tsvetan; Goux, Ludovic; Govoreanu, Bogdan; Radu, Iuliana (2020) -
A hybrid technique for TCAD modeling and optimization
Govoreanu, Bogdan; Kopalidis, George; Schoenmaker, Wim; Dima, G.; Mitrea, O.; Profirescu, M. D. (1998) -
A hybrid technique for TCAD modeling and optimization
Govoreanu, Bogdan; Schoenmaker, Wim; Kopalidis, George; Dima, G.; Mitrea, O.; Profirescu, M. (2000) -
A model for tunneling current in multi-layer tunnel dielectrics
Govoreanu, Bogdan; Blomme, Pieter; Rosmeulen, Maarten; Van Houdt, Jan; De Meyer, Kristin (2003) -
A novel low voltage memory device with an engineered SiO2/high-k tunneling barrier
Blomme, Pieter; Govoreanu, Bogdan; Van Houdt, Jan; De Meyer, Kristin (2003) -
A novel trapping/detrapping model for defect profiling in high-k materials using the two-pulse capacitance-voltage technique
Ruiz Aguado, Daniel; Govoreanu, Bogdan; Zhang, W.D.; Jurczak, Gosia; De Meyer, Kristin; Van Houdt, Jan (2010) -
A Scalable One Dimensional Silicon Qubit Array with Nanomagnets
Simion, George; Mohiyaddin, Fahd Ayyalil; Li, Roy; Shehata, Mohamed; Dumoulin Stuyck, Nard; Elsayed, Asser; Ciubotaru, Florin; Kubicek, Stefan; Jussot, Julien; Chan, BT; Ivanov, Tsvetan; Godfrin, Clement; Spessot, Alessio; Matagne, Philippe; Govoreanu, Bogdan; Radu, Iuliana (2020) -
a-IGZO Schottky diode as selector for cross-point memory application
Vaisman Chasin, Adrian; Zhang, Leqi; Bhoolokam, Ajay; Nag, Manoj; Steudel, Soeren; Govoreanu, Bogdan; Gielen, Georges; Heremans, Paul (2014) -
a-VMCO: a novel forming-free, self-rectifying analog memory cell with low-current operation, nonfilamentary switching and excellent variability
Govoreanu, Bogdan; Crotti, Davide; Subhechha, Subhali; Zhang, Leqi; Chen, Yangyin; Clima, Sergiu; Paraschiv, Vasile; Hody, Hubert; Adelmann, Christoph; Popovici, Mihaela Ioana; Richard, Olivier; Jurczak, Gosia (2015) -
Abnormal VTH/VFB shift caused by as-grown mobile charges in Al2O3 and its impacts on Flash memory cell operations
Tang, Baojun; Zhang, Weidong; Zhang, Jianfu; Van den Bosch, Geert; Govoreanu, Bogdan; Van Houdt, Jan (2011) -
Advanced a-VMCO resistive switching memory through inner interface engineering with wide (>10²) on/off window, tunable μA-range switching current and excellent variability
Govoreanu, Bogdan; Di Piazza, Luca; Ma, Jigang; Conard, Thierry; Vanleenhove, Anja; Belmonte, Attilio; Radisic, Dunja; Popovici, Mihaela Ioana; Velea, Alin; Redolfi, Augusto; Richard, Olivier; Clima, Sergiu; Adelmann, Christoph; Bender, Hugo; Jurczak, Gosia (2016) -
Advanced simulation & design of a spin-photon interface in silicon
Mohiyaddin, Fahd Ayyalil; Dumoulin Stuyck, Nard; Govoreanu, Bogdan; Li, Roy; Potocnik, Anton; Verjauw, Jeroen; Ciubotaru, Florin; Brebels, Steven; Chan, BT; Jussot, Julien; Kubicek, Stefan; Spessot, Alessio; Radu, Iuliana (2019) -
An effective model for analysing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layers
Govoreanu, Bogdan; Blomme, Pieter; Henson, Kirklen; Van Houdt, Jan; De Meyer, Kristin (2004)