Authors

Govoreanu, Bogdan; Kar, Gouri Sankar; Chen, Yangyin; Paraschiv, Vasile; Kubicek, Stefan; Fantini, Andrea; Radu, Iuliana; Goux, Ludovic; Clima, Sergiu; Degraeve, Robin; Jossart, Nico; Richard, Olivier; Vandeweyer, Tom; Seo, Kyungah; Hendrickx, Paul; Pourtois, Geoffrey; Bender, Hugo; Altimime, Laith; Wouters, Dirk; Kittl, Jorge; Jurczak, Gosia

Conference

IEEE International Electron Devices Meeting - IEDM

Title

10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation

Publication type

Proceedings paper

Embargo date

9999-12-31