Publication:

10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation

Date

2011
Proceedings Paper
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dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorChen, Yangyin
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorKubicek, Stefan
dc.contributor.authorFantini, Andrea
dc.contributor.authorRadu, Iuliana
dc.contributor.authorGoux, Ludovic
dc.contributor.authorClima, Sergiu
dc.contributor.authorDegraeve, Robin
dc.contributor.authorJossart, Nico
dc.contributor.authorRichard, Olivier
dc.contributor.authorVandeweyer, Tom
dc.contributor.authorSeo, Kyungah
dc.contributor.authorHendrickx, Paul
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorBender, Hugo
dc.contributor.authorAltimime, Laith
dc.contributor.authorWouters, Dirk
dc.contributor.authorKittl, Jorge
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorJossart, Nico
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVandeweyer, Tom
dc.contributor.imecauthorHendrickx, Paul
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.accessioned2021-10-19T13:55:49Z
dc.date.available2021-10-19T13:55:49Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18997
dc.source.beginpage729
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate5/12/2011
dc.source.conferencelocationWashington DC USA
dc.source.endpage732
dc.title

10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation

dc.typeProceedings paper
dspace.entity.typePublication
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