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10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Publication:
10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Date
2011
Proceedings Paper
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Govoreanu, Bogdan
;
Kar, Gouri Sankar
;
Chen, Yangyin
;
Paraschiv, Vasile
;
Kubicek, Stefan
;
Fantini, Andrea
;
Radu, Iuliana
;
Goux, Ludovic
;
Clima, Sergiu
;
Degraeve, Robin
;
Jossart, Nico
;
Richard, Olivier
;
Vandeweyer, Tom
;
Seo, Kyungah
;
Hendrickx, Paul
;
Pourtois, Geoffrey
;
Bender, Hugo
;
Altimime, Laith
;
Wouters, Dirk
;
Kittl, Jorge
;
Jurczak, Gosia
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2129
since deposited on 2021-10-19
Acq. date: 2025-10-23
Citations
Metrics
Views
2129
since deposited on 2021-10-19
Acq. date: 2025-10-23
Citations