Browsing by author "Altimime, Laith"
Now showing items 1-20 of 57
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10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Govoreanu, Bogdan; Kar, Gouri Sankar; Chen, Yangyin; Paraschiv, Vasile; Kubicek, Stefan; Fantini, Andrea; Radu, Iuliana; Goux, Ludovic; Clima, Sergiu; Degraeve, Robin; Jossart, Nico; Richard, Olivier; Vandeweyer, Tom; Seo, Kyungah; Hendrickx, Paul; Pourtois, Geoffrey; Bender, Hugo; Altimime, Laith; Wouters, Dirk; Kittl, Jorge; Jurczak, Gosia (2011) -
A comparative study of the microstructure–dielectric properties of crystalline SrTiO3 ALD films obtained via seed layer approach
Popovici, Mihaela Ioana; Tomida, Kazuyuki; Swerts, Johan; Favia, Paola; Delabie, Annelies; Bender, Hugo; Adelmann, Christoph; Tielens, Hilde; Brijs, Bert; Kaczer, Ben; Pawlak, Malgorzata; Kim, Min-Soo; Altimime, Laith; Van Elshocht, Sven; Kittl, Jorge (2011) -
A low-voltage biasing scheme for aggressively scaled bulk FinFET 1T-DRAM featuring 10s retention at 85°C
Collaert, Nadine; Aoulaiche, Marc; De Wachter, Bart; Rakowski, Michal; Redolfi, Augusto; Brus, Stephan; De Keersgieter, An; Horiguchi, Naoto; Altimime, Laith; Jurczak, Gosia (2010) -
A novel low-voltage biasing scheme for double gate FBC achieving 5s retention and 10^16 endurance at 85°C
Lu, Zhichao; Collaert, Nadine; Aoulaiche, Marc; De Wachter, Bart; De Keersgieter, An; Schwarzenbach, W.; Bonnin, O.; Bourdelle, K.K.; Nguyen, B.-Y.; Mazure, C.; Altimime, Laith; Jurczak, Gosia (2010) -
Advanced capacitor dielectrics: towards 2x nm DRAM
Kim, Min-Soo; Popovici, Mihaela Ioana; Swerts, Johan; Pawlak, Malgorzata; Tomida, Kazuyuki; Kaczer, Ben; Opsomer, Karl; Schaekers, Marc; Tielens, Hilde; Vrancken, Christa; Van Elshocht, Sven; Debusschere, Ingrid; Altimime, Laith; Kittl, Jorge (2011-05) -
ALD Ru and its applications in DRAM MIM-capacitors and interconnect
Schaekers, Marc; Swerts, Johan; Altimime, Laith; Tokei, Zsolt (2011) -
ALD strontium titanates and their characterization
Popovici, Mihaela Ioana; Van Elshocht, Sven; Tomida, Kazuyuki; Menou, Nicolas; Swerts, Johan; Pawlak, Malgorzata; Kaczer, Ben; Kim, Min-Soo; Brijs, Bert; Favia, Paola; Conard, Thierry; Franquet, Alexis; Moussa, Alain; Debusschere, Ingrid; Altimime, Laith; Kittl, Jorge (2010) -
Balancing SET/RESET pulse for >1010 endurance in HfO2 / Hf 1T1R bipolar RRAM
Chen, Yangyin; Govoreanu, Bogdan; Goux, Ludovic; Degraeve, Robin; Fantini, Andrea; Kar, Gouri Sankar; Wouters, Dirk; Groeseneken, Guido; Kittl, Jorge; Jurczak, Gosia; Altimime, Laith (2012) -
BJT mode endurance on a 1T-RAM bulk FinFET device
Aoulaiche, Marc; Collaert, Nadine; Degraeve, Robin; Lu, Zhichao; De Wachter, Bart; Jurczak, Gosia; Altimime, Laith (2010) -
Compositional study of BaSrTiO thin films for memory application
Tomida, Kazuyuki; Opsomer, Karl; Vrancken, Christa; Matero, Raija; Tois, Eva; Kaczer, Ben; Pawlak, Malgorzata; Popovici, Mihaela Ioana; Swerts, Johan; Van Elshocht, Sven; Detavernier, Christophe; Kim, Min-Soo; Debusschere, Ingrid; Altimime, Laith; Kittl, Jorge (2010) -
Conductive bridge random access memory technology
Kittl, Jorge; Altimime, Laith (2010) -
Controlled growth of rutile TiO2 by atomic layer deposition on oxidized ruthenium
Popovici, Mihaela Ioana; Swerts, Johan; Tomida, Kazuyuki; Radisic, Dunja; Kim, Min-Soo; Kaczer, Ben; Richard, Olivier; Bender, Hugo; Delabie, Annelies; Moussa, Alain; Vrancken, Christa; Opsomer, Karl; Franquet, Alexis; Pawlak, Malgorzata; Schaekers, Marc; Altimime, Laith; Van Elshocht, Sven; Kittl, Jorge (2011) -
Deterministic and stochastic component in RESET transient of HfSiO/FUSI gate RRAM stack
Degraeve, Robin; Goux, Ludovic; Roussel, Philippe; Wouters, Dirk; Kittl, Jorge; Altimime, Laith; Jurczak, Gosia; Groeseneken, Guido (2011) -
Dynamic 'Hour Glass' model for SET and RESET in HfO2 RRAM
Degraeve, Robin; Fantini, Andrea; Clima, Sergiu; Govoreanu, Bogdan; Goux, Ludovic; Chen, Yangyin; Wouters, Dirk; Roussel, Philippe; Kar, Gouri Sankar; Pourtois, Geoffrey; Cosemans, Stefan; Kittl, Jorge; Groeseneken, Guido; Jurczak, Gosia; Altimime, Laith (2012) -
Effect of interface states on 1T-FBRAM cell retention
Aoulaiche, Marc; Collaert, Nadine; Blomme, Pieter; Simoen, Eddy; Altimime, Laith; Groeseneken, Guido; Jurczak, Gosia; Mendes Almeida, Luciano; Caillat, Christian; Mahatme, N.N. (2012) -
Enabling 3X nm DRAM: Record low leakage 0.4 nm EOT MIM capacitors with novel stack engineering
Pawlak, Malgorzata; Popovici, Mihaela Ioana; Swerts, Johan; Tomida, Kazuyuki; Kim, Min-Soo; Kaczer, Ben; Opsomer, Karl; Schaekers, Marc; Favia, Paola; Bender, Hugo; Vrancken, Christa; Govoreanu, Bogdan; Demeurisse, Caroline; Wang, Wan-Chih; Afanasiev, Valeri; Debusschere, Ingrid; Altimime, Laith; Kittl, Jorge (2010) -
Evidences of anodic-oxidation reset mechanism in TiN\NiO\Ni RRAM cells
Goux, Ludovic; Degraeve, Robin; Govoreanu, Bogdan; Chou, H.-Y.; Afanasiev, Valeri; Meersschaut, Johan; Toeller, Michael; Wang, X.P.; Kubicek, Stefan; Richard, Olivier; Kittl, Jorge; Wouters, Dirk; Jurczak, Gosia; Altimime, Laith (2011) -
Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
Goux, Ludovic; Czarnecki, Piotr; Chen, Yangyin; Pantisano, Luigi; Wang, XinPeng; Degraeve, Robin; Govoreanu, Bogdan; Jurczak, Gosia; Wouters, Dirk; Altimime, Laith (2010) -
Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system
Goux, Ludovic; Sankaran, Kiroubanand; Kar, Gouri Sankar; Jossart, Nico; Opsomer, Karl; Degraeve, Robin; Pourtois, Geoffrey; Rignanese, G.-M.; Detavernier, C.; Clima, Sergiu; Chen, Yangyin; Fantini, Andrea; Govoreanu, Bogdan; Wouters, Dirk; Jurczak, Gosia; Altimime, Laith; Kittl, Jorge (2012) -
Floating body cell memory
Jurczak, Gosia; Collaert, Nadine; Aoulaiche, Marc; Lu, Zhichao; Altimime, Laith (2010)