Publication:
A low-voltage biasing scheme for aggressively scaled bulk FinFET 1T-DRAM featuring 10s retention at 85°C
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1965 since deposited on 2021-10-18
2last month
Acq. date: 2026-01-09
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Metrics
Views
1965 since deposited on 2021-10-18
2last month
Acq. date: 2026-01-09
Citations