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A low-voltage biasing scheme for aggressively scaled bulk FinFET 1T-DRAM featuring 10s retention at 85°C

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1970 since deposited on 2021-10-18
2last month
Acq. date: 2026-08-09

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Views

1970 since deposited on 2021-10-18
2last month
Acq. date: 2026-08-09

Citations