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A low-voltage biasing scheme for aggressively scaled bulk FinFET 1T-DRAM featuring 10s retention at 85°C
Publication:
A low-voltage biasing scheme for aggressively scaled bulk FinFET 1T-DRAM featuring 10s retention at 85°C
Date
2010
Proceedings Paper
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20208.pdf
409.81 KB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Collaert, Nadine
;
Aoulaiche, Marc
;
De Wachter, Bart
;
Rakowski, Michal
;
Redolfi, Augusto
;
Brus, Stephan
;
De Keersgieter, An
;
Horiguchi, Naoto
;
Altimime, Laith
;
Jurczak, Gosia
Journal
Abstract
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Views
1961
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations
Metrics
Views
1961
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations