Browsing by author "Goux, Ludovic"
Now showing items 1-20 of 296
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10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Govoreanu, Bogdan; Kar, Gouri Sankar; Chen, Yangyin; Paraschiv, Vasile; Kubicek, Stefan; Fantini, Andrea; Radu, Iuliana; Goux, Ludovic; Clima, Sergiu; Degraeve, Robin; Jossart, Nico; Richard, Olivier; Vandeweyer, Tom; Seo, Kyungah; Hendrickx, Paul; Pourtois, Geoffrey; Bender, Hugo; Altimime, Laith; Wouters, Dirk; Kittl, Jorge; Jurczak, Gosia (2011) -
90nm W\Al2O3\TiW\Cu 1T1R CBRAM cell showing low-power, fast and disturb-free operation
Belmonte, Attilio; Kim, Woosik; Chan, BT; Heylen, Nancy; Fantini, Andrea; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2013) -
A combinatorial study of SiGeAsTe thin films for application as an Ovonic threshold switch selector
Devulder, Wouter; Garbin, Daniele; Clima, Sergiu; Donadio, Gabriele Luca; Fantini, Andrea; Govoreanu, Bogdan; Detavernier, Christophe; Chen, Larry; Miller, Michael; Goux, Ludovic; Van Elshocht, Sven; Swerts, Johan; Delhougne, Romain; Kar, Gouri Sankar (2022-07-01) -
A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
Hsu, Brent; Simoen, Eddy; Lin, Dennis; Stesmans, Andre; Goux, Ludovic; Delhougne, Romain; Kar, Gouri Sankar (2019) -
A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
Hsu, Brent; Simoen, Eddy; Lin, Dennis; Stesmans, Andre; Goux, Ludovic; Delhougne, Romain; Carolan, Patrick; Bender, Hugo; Kar, Gouri Sankar (2020) -
A fast and reliable method used to investigate the size-dependent retention lifetime of a phase-change line cell
Goux, Ludovic; Hurkx, Fred; Wang, Xin Peng; Delhougne, Romain; Attenborough, Karen; Gravesteijn, Dirk; Wouters, Dirk; Perez Gonzalez, Jesus (2011) -
A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration
Li, Roy; Dumoulin Stuyck, Nard; Kubicek, Stefan; Jussot, Julien; Chan, BT; Mohiyaddin, Fahd Ayyalil; Elsayed, Asser; Shehata, Mohamed; Simion, George; Godfrin, Clement; Canvel, Yann; Ivanov, Tsvetan; Goux, Ludovic; Govoreanu, Bogdan; Radu, Iuliana (2020) -
A highly reliable 3-dimensional integrated SBT ferroelectric capacitor enabling FeRAM scaling
Goux, Ludovic; Russo, G.; Menou, N.; Lisoni, Judit; Schwitters, M.; Paraschiv, Vasile; Maes, David; Artoni, C.; Corallo, G.; Haspeslagh, Luc; Wouters, Dirk; Zambrano, R.; Muller, Ch. (2005-04) -
A novel CBRAM integration using subtractive dry-etching process of Cu enabling high-performance memory scaling down to 10nm node
Redolfi, Augusto; Goux, Ludovic; Jossart, Nico; Yamashita, Fumiko; Nishimura, Eiichi; Urayama, Daisuke; Fujimoto, Kiwamu; Witters, Thomas; Lazzarino, Frederic; Jurczak, Gosia (2015) -
A novel method for extracting the temperature-dependent crystal-growth parameters in fast-growth phase-change memories
Goux, Ludovic; Hurkx, Fred; Wang, Xin Peng; Delhougne, Romain; Attenborough, Karen; Gravesteijn, Dirk; Wouters, Dirk; Perez Gonzalez, Jesus (2010) -
A thermally stable and high-performance 90nm Al2O3\Cu-based 1T1R CBRAM cell
Belmonte, Attilio; Kim, Woosik; Chan, BT; Heylen, Nancy; Fantini, Andrea; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2013) -
Analysis of complementary RRAM switching
Wouters, Dirk; Zhang, Leqi; Fantini, Andrea; Degraeve, Robin; Goux, Ludovic; Chen, Yangyin; Govoreanu, Bogdan; Kar, Gouri Sankar; Groeseneken, Guido; Jurczak, Gosia (2012) -
Analysis of the excellent memory disturb characteristics of a hourglass-shaped filament in Al2O3/Cu-based CBRAM devices
Belmonte, Attilio; Celano, Umberto; Redolfi, Augusto; Fantini, Andrea; Muller, Robert; Vandervorst, Wilfried; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2015) -
Apport du rayonnement synchrotron à l'analyse de réseaux de condensateurs ferroélectriques integers
Menou, N.; Muller, Ch.; Goux, Ludovic; Wouters, Dirk; Barrett, R.; Save, D. (2004) -
Aqueous chemical solution deposition of ferroelectric Ti4+ cosubstituted (Bi,La)4Ti3O12 thin films
Hardy, An; D'Haen, Jan; Goux, Ludovic; Wouters, Dirk; Van Bael, Marlies; Van den Rul, Heidi; Mullens, J. (2007) -
Aqueous CSD and characterization of ferroelectric lanthanide substituted bismush titanate (BLnT) thin films
Hardy, An; Vanhoylandt, Geert; Van Bael, Marlies; Van den Rul, Heidi; Mullens, Jules; Van Poucke, Lucien; D'Haen, Jan; Goux, Ludovic; Wouters, Dirk (2005) -
Asymmetry and switching phenomenology in TiN\(Al2O3)\HfO2\Hf systems
Goux, Ludovic; Fantini, Andrea; Govoreanu, Bogdan; Kar, Gouri Sankar; Clima, Sergiu; Chen, Yangyin; Degraeve, Robin; Wouters, Dirk; Pourtois, Geoffrey; Jurczak, Gosia (2012-08) -
Atomic disorder - intrinsic source of variability in RRAM materials
Clima, Sergiu; Degraeve, Robin; Fantini, Andrea; Goux, Ludovic; Govoreanu, Bogdan; Jurczak, Gosia; Pourtois, Geoffrey (2016) -
Atomic disorder as an intrinsic source of variability in filamentary RRAM devices – ab initio investigations
Clima, Sergiu; Fantini, Andrea; Goux, Ludovic; Govoreanu, Bogdan; Jurczak, Gosia; Pourtois, Geoffrey (2016) -
Atomistic investigation of the electronic structure, thermal properties and conduction defects in Ge-rich GexSe1-x materials for selector applications
Clima, Sergiu; Govoreanu, Bogdan; Opsomer, Karl; Velea, Alin; Avasarala, Naga Sruti; Devulder, Wouter; Shlyakhov, I.; Donadio, Gabriele Luca; Witters, Thomas; Kundu, Shreya; Goux, Ludovic; Afanasiev, Valeri; Kar, Gouri Sankar; Pourtois, Geoffrey (2017)