Browsing by author "Goux, Ludovic"
Now showing items 21-40 of 294
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Balancing SET/RESET pulse for >1010 endurance in HfO2 / Hf 1T1R bipolar RRAM
Chen, Yangyin; Govoreanu, Bogdan; Goux, Ludovic; Degraeve, Robin; Fantini, Andrea; Kar, Gouri Sankar; Wouters, Dirk; Groeseneken, Guido; Kittl, Jorge; Jurczak, Gosia; Altimime, Laith (2012) -
Bipolar resistive electrical switching of CuTCNQ memories incorporating a dedicated switching layer
Muller, Robert; Krebs, Christoph; Goux, Ludovic; Wouters, Dirk; Genoe, Jan; Heremans, Paul; Spiga, Sabina; Fanciulli, Marco (2009-06) -
Bipolar switching characteristics and scalability in NiO layers made by thermal oxidation of Ni
Goux, Ludovic; Polspoel, Wouter; Lisoni, Judit; Chen, Yangyin; Pantisano, Luigi; Wang, Xin Peng; Vandervorst, Wilfried; Jurczak, Gosia; Wouters, Dirk (2010) -
Capacitor-less, Long-Retention (> 400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM
Belmonte, Attilio; Oh, Hyungrock; Rassoul, Nouredine; Donadio, Gabriele Luca; Mitard, Jerome; Dekkers, Harold; Delhougne, Romain; Subhechha, Subhali; Vaisman Chasin, Adrian; van Setten, Michiel; Kljucar, Luka; Mao, Ming; Puliyalil, Harinarayanan; Pak, Murat; Teugels, Lieve; Tsvetanova, Diana; Banerjee, Kaustuv; Souriau, Laurent; Tokei, Zsolt; Goux, Ludovic; Kar, Gouri Sankar (2020) -
Carbon-based liner for RESET current reduction in self-heating phase-change memory cells
De Proft, Anabel; Garbin, Daniele; Donadio, Gabriele Luca; Hody, Hubert; Witters, Thomas; Lodewijks, Kristof; Rottenberg, Xavier; Goux, Ludovic; Delhougne, Romain; Kar, Gouri Sankar (2020) -
Causes and consequences of the stochastic aspect of filamentary RRAM
Degraeve, Robin; Fantini, Andrea; Raghavan, Nagarajan; Goux, Ludovic; Clima, Sergiu; Govoreanu, Bogdan; Belmonte, Attilio; Linten, Dimitri; Jurczak, Gosia (2015) -
CBRAM technology development at imec
Goux, Ludovic (2014) -
CMOS compatible Josephson junctions for superonducting qubit applications
Ivanov, Tsvetan; Potocnik, Anton; Wan, Danny; Verjauw, Jeroen; Jussot, Julien; Mongillo, Massimo; Acharya, Rohith; Mohiyaddin, Fahd Ayyalil; Favia, Paola; Bender, Hugo; Goux, Ludovic; Govoreanu, Bogdan; Radu, Iuliana (2020) -
Co active electrode enhances CBRAM performance and scaling potential
Belmonte, Attilio; Radhakrishnan, Janaki; Donadio, Gabriele Luca; Redolfi, Augusto; Delhougne, Romain; Nyns, Laura; Covello, Angelo; Vereecke, Guy; Franquet, Alexis; Spampinato, Valentina; Kundu, Shreya; Mao, Ming; Goux, Ludovic; Kar, Gouri Sankar (2019) -
Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers
Goux, Ludovic; Lisoni, Judit; Jurczak, Gosia; Wouters, Dirk; Courtade, Lorene; Muller, Christophe (2010) -
Combinatorial study of Ag-Te thin films and their application as cation supply layer in CBRAM cells
Devulder, Wouter; Opsomer, Karl; Meersschaut, Johan; Deduytsche, Davy; Jurczak, Gosia; Goux, Ludovic; Detavernier, Christophe (2015) -
Combining TCAD and advanced metrology techniques to support device integration towards N3
Eyben, Pierre; De Keersgieter, An; Celano, Umberto; Wouters, Lennaert; Chiarella, Thomas; Ritzenthaler, Romain; Mertens, Hans; Richard, Olivier; Paredis, Kristof; Matagne, Philippe; Mitard, Jerome; Horiguchi, Naoto; Goux, Ludovic (2021) -
Composition control and ferroelectric properties of sidewall Sr0.8Bi2.2Ta2O9 in integrated 3-Dimensional ferroelectric capacitors
Goux, Ludovic; Lisoni, Judit; Schwitters, Michael; Paraschiv, Vasile; Maes, D.; Haspeslagh, Luc; Wouters, Dirk; Menou, M.; Turquat, Ch.; Madigou, V.; Muller, Ch.; Zambrano, R. (2005) -
Composition control and ferrolectric properties of sidewalls in three-dimensional SrBi2Ta2O9-based ferroelectric capacitors
Goux, Ludovic; Lisoni, Judit; Schwitters, Michael; Paraschiv, Vasile; Maes, David; Haspeslagh, Luc; Wouters, Dirk; Menou, N.; Turquat, Ch.; Madigou, V.; Muller, Ch.; Zambrano, R. (2005-09) -
Composition optimization and device understanding of Si-Ge-As-Te ovonic threshold switch selector with excellent endurance
Garbin, Daniele; Devulder, Wouter; Degraeve, Robin; Donadio, Gabriele Luca; Clima, Sergiu; Opsomer, Karl; Fantini, Andrea; Cellier, Daniel; Kim, Wan Gee; Pakala, Mahendra; Cockburn, Andrew; Detavernier, Christophe; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar (2019) -
Conductive filaments multiplicity as a variability factor in CBRAM
Celano, Umberto; Goux, Ludovic; Belmonte, Attilio; Opsomer, Karl; Detavernier, Christophe; Jurczak, Gosia; Vandervorst, Wilfried (2015) -
Conductive-AFM tomography for 3D filament observation in resistive switching devices
Celano, Umberto; Goux, Ludovic; Belmonte, Attilio; Schulze, Andreas; Opsomer, Karl; Detavernier, Christoph; Richard, Olivier; Bender, Hugo; Jurczak, Gosia; Vandervorst, Wilfried (2013) -
Control of filament size and reduction of reset current below 10μA in NiO resistance switching memories
Nardi, F.; Ielmini, D.; Cagli, C.; Spiga, S.; Fanciulli, M.; Goux, Ludovic; Wouters, Dirk (2011) -
Control of metal/oxide electron barriers in CB-RAM cells by low work-function liners
De Stefano, Francesca; Afanasiev, Valeri; Houssa, Michel; Stesmans, Andre; Opsomer, Karl; Jurczak, Gosia; Goux, Ludovic (2013) -
Cu alloys for conductive bridging memories as studied by C-AFM
Celano, Umberto; Goux, Ludovic; Opsomer, Karl; Conard, Thierry; Franquet, Alexis; Jurczak, Gosia; Vandervorst, Wilfried (2012)