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A novel CBRAM integration using subtractive dry-etching process of Cu enabling high-performance memory scaling down to 10nm node
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1932 since deposited on 2021-10-22
1last month
Acq. date: 2026-04-26
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Views
1932 since deposited on 2021-10-22
1last month
Acq. date: 2026-04-26
Citations