Publication:
A novel CBRAM integration using subtractive dry-etching process of Cu enabling high-performance memory scaling down to 10nm node
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1931 since deposited on 2021-10-22
2last month
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Acq. date: 2026-02-25
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Statistics
Views
1931 since deposited on 2021-10-22
2last month
1last week
Acq. date: 2026-02-25
Citations